MJE18006G ON Semiconductor, MJE18006G Datasheet - Page 6

• Manufacturer Part Number: MJE18006G
• Description: TRANS PWR NPN 8A 450V TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18006G

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 600mA, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 3A, 1V
• Power - Max: 100W
• Frequency - Transition: 14MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

COMMON
+15 V
+10 V
-V
-1
-2
-3
-4
-5
Figure 18. Dynamic Saturation Voltage Measurements
5
4
3
2
1
0
off
0
0.01
0.1
1 mF
V
1
0.01
CE
I
B
MPF930
50 W
D = 0.5
0.05
0.02
1
0.2
0.1
1 ms
90% I
dyn 1 ms
2
150 W
500 mF
3 W
B
SINGLE PULSE
3 ms
MPF930
3
100 W
3 W
dyn 3 ms
TIME
0.1
4
Figure 20. Typical Thermal Response (Z
150 W
3 W
Table 1. Inductive Load Switching Drive Circuit
5
MTP8P10
MJE210
MUR105
TYPICAL THERMAL RESPONSE
6
MTP12N10
MTP8P10
http://onsemi.com
7
1
8
R
R
6
t, TIME (ms)
B1
B2
A
1 mF
I
10
out
9
8
7
6
5
4
3
2
1
0
100 mF
P
0
(pk)
DUTY CYCLE, D = t
V
Figure 19. Inductive Switching Measurements
I
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
V
I
B
C
I
CLAMP
CC
C
(pk) = 100 mA
t
1
= 20 VOLTS
1
V
10
CE
qJC
I
t
B
2
(t)) for MJE18006
90% I
I
2
B
10% V
1
B
1
1
/t
CLAMP
2
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
V
RB1 SELECTED FOR
DESIRED I
3
CC
V
CE
I
= 15 VOLTS
B
t
si
PEAK
2
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
TIME
J(pk)
qJC
qJC
4
B
(t) = r(t) R
1
= 1.25°C/W MAX
- T
100
C
= P
5
qJC
(pk)
t
1
c
I
R
C
90% I
qJC
PEAK
t
RBSOA
L = 500 mH
RB2 = 0
V
RB1 SELECTED
FOR DESIRED I
fi
6
CC
(t)
C
= 15 VOLTS
10% I
7
C
1000
B
1
8