MJE18006G ON Semiconductor, MJE18006G Datasheet - Page 5

• Manufacturer Part Number: MJE18006G
• Description: TRANS PWR NPN 8A 450V TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18006G

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 600mA, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 3A, 1V
• Power - Max: 100W
• Frequency - Transition: 14MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 16. Reverse Bias Switching Safe Operating Area
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
0.01
100
0.1
180
160
140
120
100
10
There are two limitations on the power handling ability
80
60
1
7
6
5
4
3
2
1
0
10
0
3
Figure 15. Forward Bias Safe Operating Area
DC (MJE18006)
I
C
4
= 3 A
5 ms
V
V
CE
CE
5
200
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Inductive Fall Time
T
T
J
J
1 ms
6
= 25°C
= 125°C
V
7
BE(off)
h
400
FE
, FORCED GAIN
8
= 0 V
GUARANTEED SAFE OPERATING AREA INFORMATION
100
9
600
10
TYPICAL SWITCHING CHARACTERISTICS
I
EXTENDED
C
11
-1, 5 V
= 1.3 A
SOA
10 ms
12
T
I
L
800
C
(I
C
C
I
V
V
L
/I
B(off)
C
B
= 500 mH
B2
CC
Z
≤ 125°C
13
= 300 V
= 200 mH
≥ 4
C
= 15 V
1 ms
= I
= I
− V
http://onsemi.com
- 5 V
14
C
/2
1000
1000
C
CE
/2 for all switching)
15
5
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15 is
based on T
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. T
from the data in Figure 20. At any case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse−biased. The safe level is
specified as a reverse−biased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.
350
300
250
200
150
100
1,0
0,8
0,6
0,4
0,2
0,0
50
20
3
C
4
I
Figure 17. Forward Bias Power Derating
C
= 25°C; T
Figure 14. Inductive Crossover Time
= 1.3 A
40
5
T
T
J
J
= 25°C
= 125°C
6
T
60
C
J(pk)
THERMAL DERATING
, CASE TEMPERATURE (°C)
7
h
FE
is variable depending on power
, FORCED GAIN
8
80
9
I
C
J(pk)
= 3 A
100
10
SECOND BREAKDOWN
may be calculated
11
C
≥ 25°C. Second
120
DERATING
12
I
V
V
L
B(off)
C
CC
Z
13
= 300 V
= 200 mH
140
= 15 V
= I
14
C
/2
160
15