MJE18006G ON Semiconductor, MJE18006G Datasheet - Page 3

• Manufacturer Part Number: MJE18006G
• Description: TRANS PWR NPN 8A 450V TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18006G

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 600mA, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 3A, 1V
• Power - Max: 100W
• Frequency - Transition: 14MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
1.5
0.5
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
10
1
0.01
2
1
0
0.01
1
0.01
T
T
J
J
T
T
T
T
= 125°C
J
J
= 25°C
J
J
Figure 5. Base−Emitter Saturation Region
= 125°C
= - 20°C
= 25°C
= 25°C
I
Figure 3. Collector Saturation Region
C
Figure 1. DC Current Gain @ 1 Volt
= 1 A
I
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
I
B
0.1
0.1
0.1
, BASE CURRENT (AMPS)
2 A
3 A
5 A
TYPICAL STATIC CHARACTERISTICS
1
1
1
V
CE
6 A
I
I
C
C
= 1 V
/I
/I
B
B
= 5
= 10
http://onsemi.com
10
10
10
3
10000
1000
0.01
100
100
0.1
10
10
10
1
0.01
1
0.01
1
1
Figure 4. Collector−Emitter Saturation Voltage
I
T
T
T
C
I
C
J
J
/I
J
/I
= 125°C
= - 20°C
B
= 25°C
B
= 10
= 5
Figure 2. DC Current Gain @ 5 Volts
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
I
C
C
, COLLECTOR CURRENT (AMPS)
Figure 6. Capacitance
COLLECTOR CURRENT (AMPS)
0.1
0.1
10
C
ib
100
1
1
V
CE
C
T
T
ob
= 5 V
J
J
= 25°C
= 125°C
T
f = 1 MHz
J
= 25°C
1000
10
10