BUH50G ON Semiconductor, BUH50G Datasheet - Page 7

• Manufacturer Part Number: BUH50G
• Description: TRANS NPN SW 500V 4A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUH50G

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 500V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1A, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 2A, 5V
• Power - Max: 50W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

COMMON
+15 V
+10 V
-V
off
0.01
1 mF
0.1
1
0.01
MPF930
50
W
0.05
0.1
0.02
SINGLE PULSE
0.5
0.2
150 W
3 W
500 mF
MPF930
100 W
3 W
0.1
Figure 22. Typical Thermal Response (Z
150 W
3 W
Table 1. Inductive Load Switching Drive Circuit
MTP8P10
MJE210
MUR105
TYPICAL CHARACTERISTICS
MTP12N10
MTP8P10
http://onsemi.com
1
R
R
t, TIME (ms)
B2
B1
7
A
1 mF
I
out
P
(pk)
100 mF
DUTY CYCLE, D = t
t
1
V
L = 10 mH
R
V
I
C(pk)
(BR)CEO(sus)
CC
t
B2
2
10
V
CE
= ∞
= 20 Volts
I
B
= 100 mA
qJC
(t)) for BUH50
I
B1
1
/t
2
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
V
J(pk)
CE
qJC
qJC
I
Inductive Switching
L = 200 mH
R
V
R
B2
PEAK
B2
CC
B1
(t) = r(t) R
= 2.5°C/W MAX
desired I
- T
= 0
selected for
= 15 Volts
C
= P
100
B1
qJC
(pk)
1
R
qJC
I
(t)
C
PEAK
RBSOA
L = 500 mH
R
V
R
CC
B2
B1
desired I
= 0
selected for
= 15 Volts
1000
B1