BUH50G ON Semiconductor, BUH50G Datasheet - Page 6

• Manufacturer Part Number: BUH50G
• Description: TRANS NPN SW 500V 4A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUH50G

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 500V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1A, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 2A, 5V
• Power - Max: 50W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 20 is
based on T
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
There are two limitations on the power handling ability of
0.01
0.1
10
1
10
0 V
I
Figure 20. Forward Bias Safe Operating Area
V
B
CE
C
Figure 18. Dynamic Saturation Voltage
= 25°C; T
V
CE
1 ms
90% I
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
dyn 1 ms
B
3 ms
J(pk)
5 ms
is variable depending on power
1 ms
DC
dyn 3 ms
TIME
100
C
> 25°C. Second
10 ms
TYPICAL CHARACTERISTICS
EXTENDED
C
http://onsemi.com
SOA
1 ms
−V
CE
1000
6
Figure 20 may be found at any case temperature by using the
appropriate curve on Figure 17.
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 21). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
10
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
T
300
0
J(pk)
Figure 19. Inductive Switching Measurements
Figure 21. Reverse Bias Safe Operating Area
V
I
B
clamp
may be calculated from the data in Figure 22. At any
1
I
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
90% I
2
10% V
B1
3
0 V
clamp
t
si
TIME
GAIN ≥ 3
600
4
-1.5 V
5
t
c
90% I
6
t
T
L
fi
C
C
C
= 500 mH
- 5 V
≤ 125°C
10% I
7
C
900
8