BUH50 ON Semiconductor, BUH50 Datasheet

TRANS NPN SW 500V 4A TO-220AB

BUH50

Manufacturer Part Number
BUH50
Description
TRANS NPN SW 500V 4A TO-220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.BUH50G.pdf (8 pages)

Specifications of BUH50

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
500V
Vce Saturation (max) @ Ib, Ic
1V @ 1A, 3A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
5 @ 2A, 5V
Power - Max
50W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BUH50
Manufacturer:
ST
0
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BUH50
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUH50G
Manufacturer:
ON Semiconductor
Quantity:
1 250
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BUH50G
Manufacturer:
ON/安森美
Quantity:
20 000
BUH50G
SWITCHMODEt NPN
Silicon Planar Power
Transistor
for use in 50 Watts HALOGEN electronic transformers and
SWITCHMODE applications.
Features
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 5
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The BUH50G has an application specific state−of−art die designed
Reproductible Parametric Distributions
Improved Efficiency Due to Low Base Drive Requirements:
ON Semiconductor Six Sigma Philosophy Provides Tight and
Specified Dynamic Saturation Data
Full Characterization at 125°C
These Devices are Pb−Free and are RoHS Compliant*
High and Flat DC Current Gain h
Fast Switching
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
C
= 25_C
Symbol
Symbol
T
V
V
V
V
FE
R
R
J
I
I
P
CEO
CBO
EBO
, T
T
CES
CM
BM
I
I
qJC
qJA
C
B
D
L
stg
−65 to 150
Value
Max
62.5
500
800
800
260
0.4
2.5
50
9
4
8
2
4
1
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
_C
W
BUH50G
Device
POWER TRANSISTOR
800 VOLTS, 50 WATTS
1
BUH50
A
Y
WW
G
ORDERING INFORMATION
2
3
MARKING DIAGRAM
http://onsemi.com
4 AMPERES
(Pb−Free)
Package
TO−220
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
BUH50G
AY WW
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
50 Units / Rail
Shipping
BUH50/D

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BUH50 Summary of contents

Page 1

... BUH50G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH50G has an application specific state−of−art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications. Features • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h Fast Switching • ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 3

T = 125° 25° 40° 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt ...

Page 4

TYPICAL STATIC CHARACTERISTICS 125° 40° 25°C J 0.1 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 7. Base−Emitter Saturation Region TYPICAL SWITCHING ...

Page 5

Boff 300 200 COLLECTOR CURRENT (AMPS) C ...

Page 6

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not ...

Page 7

... Inductive Switching RBSOA L = 200 500 mH = ∞ Volts Volts 100 mA R selected for desired (t) = r(t) R qJC qJC R = 2.5°C/W MAX qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME (t) qJC J(pk) C (pk 100 (t)) for BUH50 qJC = Volts selected for desired I B1 1000 ...

Page 8

... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BUH50/D ...

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