PZTA 14 E6327 Infineon Technologies, PZTA 14 E6327 Datasheet - Page 3

• Manufacturer Part Number: PZTA 14 E6327
• Description: TRANSISTOR DARL NPN AF SOT-223
• Manufacturer: Infineon Technologies

Specifications of PZTA 14 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1.5W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.3 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: PZTA14E6327XT; SP000010688

h
Ι
DC current gain h
V
Base-emitter saturation voltage
I
C
C
FE
CE
= ƒ( V
mA
10
10
10
10
10
10
10
10
5
5
= 5 V
5
5
5
10
3
2
1
0
6
5
4
3
0
PZTA 13/14
PZTA 13/14
-1
BEsat
), h
10
0
125
FE
-55 ˚C
1.0
25 ˚C
FE
˚C
= 1000
= ƒ( I
10
1
C
)
2.0
150
-50 ˚C
25 ˚C
10
˚C
V
2
Ι
BEsat
C
V
EHP00719
EHP00721
mA
10
3.0
3
3
Ι
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
C
C
CB0
CBO
= ƒ( V
mA
10
10
10
10
nA
10
10
10
10
10
5
5
5
5
5
3
2
1
0
= 30 V
4
3
1
0
2
0
PZTA 13/14
0
PZTA 13/14
CEsat
), h
FE
0.5
50
= 1000
max
CBO
1.0
100
= ƒ( T
2008-03-07
150
V
T
-50 ˚C
PZTA14
25 ˚C
A
CEsat
EHP00720
V
typ
EHP00718
A
˚C
˚C
)
150
1.5