BFN 39 H6327 Infineon Technologies, BFN 39 H6327 Datasheet - Page 4

• Manufacturer Part Number: BFN 39 H6327
• Description: TRANS RF PNP 300V SOT223
• Manufacturer: Infineon Technologies

Specifications of BFN 39 H6327

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
totmax
tot max
tot
DC
pF
90
70
60
50
40
30
20
10
10
10
10
10
0
5
5
5
0
/P
10
3
2
1
0
BFN 37/39
totDC
-6
10
4
=
-5
(t
10
8
p
CEB
-4
D
)
=
t
T
10
p
12
-3
t
p
10
eb
-2
T
cb
16
= (V
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= (V
t
s
p
EHP00254
V
V
EB
CB
CB
CCB
)
10
(V
22
)
EB
0
)
4
Total power dissipation P
W
1.8
1.2
0.9
0.6
0.3
0
0
15
30
45
60
75
90 105 120
tot
= (T
2007-03-29
BFN39
S
)
T
°C
S
150