BFN 39 H6327 Infineon Technologies, BFN 39 H6327 Datasheet - Page 3

• Manufacturer Part Number: BFN 39 H6327
• Description: TRANS RF PNP 300V SOT223
• Manufacturer: Infineon Technologies

Specifications of BFN 39 H6327

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

h
DC current gain h
V
Collector cutoff current I
V
CB0
FE
CE
CBO
nA
10
10
10
10
10
10
10
10
10
10
= 10 V
5
5
5
5
5
5
5
3
2
1
0
10
4
3
2
1
0
-1
= 200 V
0
BFN 37/39
BFN 37/39
-1
5
10
0
50
FE
5
=
10
(I
1
CBO
max
C
)
100
5
=
10
T
typ
C
2
A
(T
EHP00642
EHP00644
mA
A
˚C
)
10
150
3
3
f
Collector current I
V
Transition frequency f
V
T
C
CE
CE
MHz
mA
10
10
10
10
10
10
10
10
5
5
5
5
= 10V
= 10 V
3
2
1
-1
3
2
1
0
10
BFN 37/39
0
BFN 37/39
0
5
10
0.5
C
1
= (V
T
=
5
BE
(I
)
10
1.0
C
2
)
2007-03-29
mA
V
C
BE
BFN39
EHP00643
EHP00641
5
V
10
1.5
3