BCP53-10T1G ON Semiconductor, BCP53-10T1G Datasheet - Page 5

• Manufacturer Part Number: BCP53-10T1G
• Description: TRANSISTOR PNP 80V 1.5A SOT-223
• Manufacturer: ON Semiconductor

Specifications of BCP53-10T1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1.5W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

180
160
140
120
100
80
60
40
20
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0
0
0.001
0.001
0.001
Figure 1. Collector Emitter Saturation Voltage
Figure 5. BCP53, −10 Base Emitter Saturation
+25°C
+150°C
IC/IB = 10
IC/IB = 10
−55°C
Figure 3. DC Current Gain vs. Collector
Voltage vs. Collector Current
0.01
I
I
I
C
C
C
0.01
0.01
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (mA)
150°C, 2 V
−55°C, 5 V
−55°C, 2 V
25°C, 5 V
vs. Collector Current
25°C, 2 V
Current (BCP53−10)
BCP53, −10, −16
BCP53, −10
150°C, 5 V
0.1
0.1
0.1
+150°C
TYPICAL CHARACTERISTICS
1
1
1
−55°C
+25°C
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10
10
10
3
200
180
160
140
120
100
300
250
200
150
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
80
60
40
20
50
0
0
0.001
0.001
0.001
+25°C
−55°C
IC/IB = 10
+150°C
Figure 6. BCP53−16 Base Emitter Saturation
Figure 2. DC Current Gain vs. Collector
Figure 4. DC Current Gain vs. Collector
Voltage vs. Collector Current
I
C
0.01
0.01
I
I
0.01
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
150°C, 2 V
150°C, 2 V
−55°C, 5 V
25°C, 5 V
−55°C, 2 V
150°C, 5 V
−55°C, 5 V
−55°C, 2 V
25°C, 2 V
25°C, 5 V
25°C, 2 V
Current (BCP53−16)
BCP53 −16
Current (BCP53)
150°C, 5 V
0.1
0.1
0.1
1
1
1
10
10
10