BCP53-10T1G ON Semiconductor, BCP53-10T1G Datasheet - Page 3

• Manufacturer Part Number: BCP53-10T1G
• Description: TRANSISTOR PNP 80V 1.5A SOT-223
• Manufacturer: ON Semiconductor

Specifications of BCP53-10T1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1.5W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Emitter−Base Breakdown Voltage (I
Collector−Base Cutoff Current (V
Emitter−Base Cutoff Current (V
DC Current Gain (I
Collector−Emitter Saturation Voltage (I
Base−Emitter On Voltage (I
Current−Gain − Bandwidth Product
(I
(I
(I
C
C
C
= −150 mAdc, V
= − 500 mAdc, V
= −10 mAdc, V
C
CE
= − 5.0 mAdc, V
CE
CE
= − 5.0 Vdc, f = 35 MHz)
= − 2.0 Vdc)
= − 2.0 Vdc) All Part Types
C
Characteristics
= − 500 mAdc, V
EB
CB
= − 5.0 Vdc, I
E
= − 30 Vdc, I
CE
C
= −10 mAdc, I
C
= −100 mAdc, I
C
C
= − 2.0 Vdc) All Part Types
= − 500 mAdc, I
(T
= −1.0 mAdc, I
= −100 mAdc, R
A
= 25°C unless otherwise noted)
CE
C
E
= − 2.0 Vdc)
= 0)
= 0)
C
= 0)
E
= 0)
B
B
BE
http://onsemi.com
= − 50 mAdc)
= 0)
= 1.0 kW)
BCP53−10
BCP53−16
BCP53
2
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
CE(sat)
I
I
BE(on)
h
CBO
EBO
f
FE
T
−100
−100
−5.0
−80
Min
100
25
40
63
25
−
−
−
−
−
Typ
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−100
−0.5
Max
−1.0
−10
250
160
250
−
−
−
−
−
−
−
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
−