MMBTA56LT1G ON Semiconductor, MMBTA56LT1G Datasheet - Page 4

• Manufacturer Part Number: MMBTA56LT1G
• Description: TRANS DRIVER SS PNP 80V SOT23
• Manufacturer: ON Semiconductor
• Type: Driverr

Specifications of MMBTA56LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 300mW
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: - 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -500 mA
• Current, Gain: 100
• Frequency: 50 MHz
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -80 V
• Voltage, Collector To Base: -80 V
• Voltage, Collector To Emitter: -80 V
• Voltage, Collector To Emitter, Saturation: -0.25 V
• Voltage, Emitter To Base: -4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBTA56LT1GOS; MMBTA56LT1GOS; MMBTA56LT1GOSTR

A
A1
E
1
3
D
e
2
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
MMBTA55LT1, MMBTA56LT1
0.037
0.95
0.035
0.9
0.031
VIEW C
PACKAGE DIMENSIONS
0.8
SOLDERING FOOTPRINT*
L1
L
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
q
0.25
c
5
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STANDARD 318−08.
STYLE 6:
0.079
DIM
PIN 1. BASE
A1
H
2.0
L1
A
b
D
E
c
e
L
E
inches
mm
2. EMITTER
3. COLLECTOR
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
INCHES
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
NOM
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX