MMBTA56LT1G ON Semiconductor, MMBTA56LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBTA56LT1G
• Description: TRANS DRIVER SS PNP 80V SOT23
• Manufacturer: ON Semiconductor
• Type: Driverr

Specifications of MMBTA56LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 300mW
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: - 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -500 mA
• Current, Gain: 100
• Frequency: 50 MHz
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -80 V
• Voltage, Collector To Base: -80 V
• Voltage, Collector To Emitter: -80 V
• Voltage, Collector To Emitter, Saturation: -0.25 V
• Voltage, Emitter To Base: -4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBTA56LT1GOS; MMBTA56LT1GOS; MMBTA56LT1GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MMBTA55LT1
MMBTA55LT1G
MMBTA55LT3
MMBTA55LT3G
MMBTA56LT1
MMBTA56LT1G
MMBTA56LT3
MMBTA56LT3G
−1.0
−0.8
−0.6
−0.4
−0.2
0
−0.05
−10 mA
−0.1
Device Order Number
I
C
Figure 7. Collector Saturation Region
−50 mA
=
I
C
−0.2
=
−0.5
I
B
, BASE CURRENT (mA)
−100 mA
−1.0
I
C
=
−2.0
−250 mA
I
C
−5.0
=
MMBTA55LT1, MMBTA56LT1
−10
−500 mA
I
C
T
=
−20
J
= 25°C
−50
Package Type
4
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
−0.5
Figure 8. Base−Emitter Temperature Coefficient
−1.0 −2.0
R
qVB
for V
I
C
−5.0
, COLLECTOR CURRENT (mA)
BE
−10
−20
10,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
Shipping
−50
−100
†
−200
−500