MMBTA56LT1G ON Semiconductor, MMBTA56LT1G Datasheet
MMBTA56LT1G
Manufacturer Part Number
MMBTA56LT1G
Description
TRANS DRIVER SS PNP 80V SOT23
Manufacturer
ON Semiconductor
Type
Driverr
Specifications of MMBTA56LT1G
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
225mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
4V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Power Dissipation
300mW
Frequency (max)
50MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
- 0.5 A
Maximum Dc Collector Current
0.5 A
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100 at 10 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
-500 mA
Current, Gain
100
Frequency
50 MHz
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-80 V
Voltage, Collector To Base
-80 V
Voltage, Collector To Emitter
-80 V
Voltage, Collector To Emitter, Saturation
-0.25 V
Voltage, Emitter To Base
-4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBTA56LT1GOS
MMBTA56LT1GOS
MMBTA56LT1GOSTR
MMBTA56LT1GOS
MMBTA56LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA56LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMBTA56LT1G
Manufacturer:
ON
Quantity:
4 388
Part Number:
MMBTA56LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBTA55LT1,
MMBTA56LT1
Driver Transistors
PNP Silicon
Features
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Pb−Free Packages are Available
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
MMBTA56LT1 is a Preferred Device
A
= 25°C
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−500
−4.0
Max
−60
−80
−60
−80
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
2xx = Device Code
M
G
ORDERING INFORMATION
MARKING DIAGRAM
= Date Code*
= Pb−Free Package
BASE
x = H for MMBTA55LT1
xx = GM for MMBTA56LT1
1
1
1
CASE 318
STYLE 6
SOT−23
2xx M G
COLLECTOR
2
EMITTER
G
3
2
3
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MMBTA56LT1G Summary of contents
Page 1
MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage MMBTA55 MMBTA56 Collector −Base Voltage MMBTA55 MMBTA56 Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note −1.0 mAdc Emitter −Base Breakdown Voltage = −100 mAdc Collector Cutoff Current (V = −60 Vdc, ...
Page 3
... Figure 7. Collector Saturation Region ORDERING INFORMATION Device Order Number MMBTA55LT1 MMBTA55LT1G MMBTA55LT3 MMBTA55LT3G MMBTA56LT1 MMBTA56LT1G MMBTA56LT3 MMBTA56LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MMBTA55LT1, MMBTA56LT1 −0 25° ...
Page 4
... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MMBTA55LT1, MMBTA56LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...