SMBT2907AE6327 Infineon Technologies, SMBT2907AE6327 Datasheet - Page 5

• Manufacturer Part Number: SMBT2907AE6327
• Description: TRANS PNP 60V SOT-23
• Manufacturer: Infineon Technologies

Specifications of SMBT2907AE6327

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: SMBT2907A; SMBT2907AE6327XT; SMBT2907AINTR; SMBT2907AXTINTR; SMBT2907AXTINTR; SP000011181

h
f
DC current gain h
V
Transition frequency f
V
T
FE
CE
CE
MHz
10
10
10
10
10
10
5
5
= 5 V
= 5 V
5
5
3
2
1
10
3
2
1
10
SMBT 2907/A
SMBT 2907/A
0
-1
5
10
0
10
FE
1
=
T
10
150 ˚C
-50 ˚C
=
(I
25 ˚C
1
5
C
)
(I
10
C
2
)
10
mA
C
C
2
EHP00749
EHP00754
mA
5
10
10
3
3
5
Saturation voltage I
h
Collector-base capacitance C
Emitter-base capacitance C
C
FE
mA
10
10
10
10
10
10
5
5
5
= 10
pF
30
26
24
22
20
18
16
14
12
10
3
2
1
0
-2
-1
8
6
4
2
0
0
SMBT 2907/A
0.2
SMBT2907A/MMBT2907A
4
0.4
V
CE
CEB
0.6
8
C
= (V
0.8
12
1.0
BEsat
eb
V
V
16
cb
BE
2007-04-26
BE sat
= (V
1.2
; V
= (V
CEsat
V ,
V
EHP00750
VCB0(VEB0
EB
V
CE sat
CCB
CB
)
22
)
1.6
)