SMBT2907A Infineon Technologies, SMBT2907A Datasheet

TRANSISTOR, PNP, SOT-23

SMBT2907A

Manufacturer Part Number
SMBT2907A
Description
TRANSISTOR, PNP, SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of SMBT2907A

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
330mW
Dc Collector Current
600mA
Transistor Case Style
SOT-23
No. Of Pins
3
Collector Emitter Voltage Vces
400mV
Dc Current Gain Hfe
100
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Type
SMBT2907A/MMBT2907A s2F
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1 For calculation of R
PNP Silicon Switching Transistor
• High DC current gain: 0.1 mA to 500 mA
• Low collector-emitter saturation voltage
• Complementary type:
S
SMBT2222A / MMBT2222A (NPN)
≤ 77 °C
thJA
please refer to Application Note Thermal Resistance
1)
Marking
1 = B
1
Pin Configuration
Symbol
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
EBO
tot
thJS
2 = E
SMBT2907A/MMBT2907A
3 = C
3
-65 ... 150
Value
Value
≤ 220
600
330
150
60
60
5
Package
SOT23
2006-03-20
1
Unit
V
mA
mW
°C
Unit
K/W
2

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SMBT2907A Summary of contents

Page 1

... PNP Silicon Switching Transistor • High DC current gain: 0 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A / MMBT2222A (NPN) Type SMBT2907A/MMBT2907A s2F Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation- T ≤ 77 °C S Junction temperature ...

Page 2

... Collector-emitter saturation voltage I = 150 mA 500 mA Base emitter saturation voltage 150 mA 500 mA Puls test: t ≤ 300µ 25°C, unless otherwise specified A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO CEsat 1) V BEsat 2 SMBT2907A/MMBT2907A Values Unit min. typ. max µ 0. 100 - - 100 - - 100 - 300 0.4 ...

Page 3

... Collector-base capacitance MHz CB Emitter-base capacitance MHz EB Delay time 150 mA 0.5 V BE(off) Rise time 150 mA 0.5 V BE(off) Storage time 150 mA Fall time 150 mA 25°C, unless otherwise specified A Symbol mA mA stg = I = 15mA 15mA SMBT2907A/MMBT2907A Values Unit min. typ. max. 200 - - MHz - - 2006-03-20 ...

Page 4

... Test circuit Delay and rise time Input Ω < 2ns r 0 -16 V 200 ns Storage and fall time Input Ω < -30 V 200 ns Oscillograph: R > 100, C < 12pF, t SMBT2907A/MMBT2907A -30 V 200 Osc Ω Ω - Ω Ω Ω < 5ns r 4 Ω < EHN00053 200 Ω Osc. t < ...

Page 5

... Transition frequency f = ƒ SMBT 2907 MHz Saturation voltage EHP00754 Ι Ι Collector-base capacitance C C Emitter-base capacitance C EHP00749 Ι SMBT2907A/MMBT2907A = ƒ BEsat SMBT 2907 0.2 0.4 0.6 0.8 1 sat cb = ƒ CEB 2006-03- CEsat EHP00750 1 sat = ƒ CCB V 22 VCB0(VEB0 ...

Page 6

... tot ƒ Total power dissipation EHP00747 360 mW 300 270 240 210 180 150 120 Delay time t Rise time t EHP00748 0.005 0.01 0.02 10 0.05 0.1 0.2 0 SMBT2907A/MMBT2907A = ƒ (T tot 105 120 = ƒ ƒ SMBT 2907 °C 150 T S EHP00751 = Ι C 2006-03-20 ...

Page 7

... Storage time t = ƒ stg C SMBT 2907 stg Fall time t EHP00752 Ι SMBT2907A/MMBT2907A = (I ) ƒ SMBT 2907 EHP00753 = Ι C 2006-03-20 ...

Page 8

... Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0. Lead width can be 0.6 max. in dambar area 0.8 0.8 1.2 Manufacturer EH Date code (Year/Month) Type code Example 4 0.9 3.15 8 SMBT2907A/MMBT2907A 1 ±0.1 0.1 MAX 2003, July BCW66 0.2 1.15 2006-03-20 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SMBT2907A/MMBT2907A 9 2006-03-20 ...

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