2SA1013-R(TE6,F,M) Toshiba, 2SA1013-R(TE6,F,M) Datasheet - Page 4

• Manufacturer Part Number: 2SA1013-R(TE6,F,M)
• Description: TRANSISTOR PNP 160V 1A TO-92
• Manufacturer: Toshiba

Specifications of 2SA1013-R(TE6,F,M)

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 200mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

−0.003
−0.05
−0.03
−0.01
−0.5
−0.3
−0.1
300
100
50
30
10
−3
−1
5
3
−1
-1
*: Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
I C max = −1.0 A
DC operation
Ta = 25°C
Ta = 25°C
Common emitter
Ta = 25°C
Collector-emitter voltage V
I C max (pulsed)*
−3
−3
Collector current I
Safe Operating Area
100 ms*
Thermal limited
−10
−10
f
T
– I
C
−30
−30
S/B limited
C
V CE = −5 V
V CEO max
1 ms*
CE
(A)
10 ms*
−100
−100
−2
(V)
−300
−300
4
300
100
50
30
10
5
3
-1
−3
Collector-base voltage V
−10
C
ob
– V
CB
−30
Common emitter
f = 1 MHz
Ta = 25°C
CE
−100
(V)
2006-11-09
2SA1013
−300