2SA1013-R(TE6,F,M) Toshiba, 2SA1013-R(TE6,F,M) Datasheet - Page 3

• Manufacturer Part Number: 2SA1013-R(TE6,F,M)
• Description: TRANSISTOR PNP 160V 1A TO-92
• Manufacturer: Toshiba

Specifications of 2SA1013-R(TE6,F,M)

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 200mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

−0.05
−0.03
−1.0
−0.8
−0.6
−0.4
−0.2
−0.5
−0.3
−0.1
300
100
−3
−1
50
30
10
−5
−10
0
5
0
Common emitter
I C /I B = 10
Common emitter
Ta = 100°C
−10
Ta = 100°C
−4
−15
V CE = −10 V
V CE = −5 V
Collector-emitter voltage V
−30
25
Collector current I
0
Collector current I
25
−8
0
−30
V
−12
CE (sat)
−12
I
h
C
FE
−100
– V
– I
−100
CE
−16
C
– I
−10
I B = −1 mA
−4.5
C
0
−3
C
−2
−8
C
−6
(mA)
Common emitter
Ta = 25°C
−20
CE
−300
(A)
−300
(V)
−24
−1000
−1000
−28
3
−0.05
−0.03
−0.5
−0.3
−0.1
−1.0
−0.8
−0.6
−0.4
−0.2
300
100
50
30
10
−3
−1
−0
−5
−10
5
0
Common emitter
Ta = 25°C
Common emitter
Ta = 25°C
−10
−0.2
I C /I B = 10
Base-emitter voltage V
−30
5
−0.4
Collector current I
Collector current I
Ta = 100°C
−30
V
CE (sat)
−0.6
I
h
C
FE
−100
– V
25
– I
−100
−0.8
BE
C
– I
0
C
C
C
V CE = −2 V
BE
−1.0
Common emitter
V CE = −5 V
−300
(A)
(A)
−300
(V)
−1.2
2006-11-09
−5
2SA1013
−10
−1000
−1000
−1.4