2SA1013-R(TE6,F,M) Toshiba, 2SA1013-R(TE6,F,M) Datasheet - Page 2

• Manufacturer Part Number: 2SA1013-R(TE6,F,M)
• Description: TRANSISTOR PNP 160V 1A TO-92
• Manufacturer: Toshiba

Specifications of 2SA1013-R(TE6,F,M)

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 200mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
Characteristics
FE
indicator
Characteristics
classification R: 60 to 120, O: 100 to 200
A1013
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
h
V
Symbol
FE
(BR) CEO
CE (sat)
I
I
V
C
CBO
EBO
f
BE
T
ob
(Note) V
V
V
I
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
= −10 mA, I
= −500 mA, I
= −150 V, I
= −6 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −10 V, I
2
Test Condition
C
C
C
C
B
E
= 0
= −200 mA
= −5 mA
= −200 mA
B
E
= 0
= 0, f = 1 MHz
= −50 mA
= 0
−0.45
−160
Min
60
15
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
50
⎯
2006-11-09
−0.75
2SA1013
Max
−1.0
−1.0
−1.5
200
35
⎯
⎯
MHz
Unit
μA
μA
pF
V
V
V