PZTA92,115 NXP Semiconductors, PZTA92,115 Datasheet - Page 2

TRANS PNP 300V 100MA SOT223

PZTA92,115

Manufacturer Part Number
PZTA92,115
Description
TRANS PNP 300V 100MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PZTA92,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 30mA, 10V
Power - Max
1.2W
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
1200 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933982080115
PZTA92 T/R
PZTA92 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PZTA92,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Video equipment
• Telephony
• Professional communication equipment.
DESCRIPTION
PNP high-voltage transistor in a SOT223 plastic package.
NPN complement: PZTA42.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 14
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP high-voltage transistor
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
open base
open collector
T
amb
2
≤ 25 °C; note 1
PINNING
handbook, halfpage
CONDITIONS
PIN
2, 4
Fig.1 Simplified outline (SOT223) and symbol.
1
3
Top view
1
base
collector
emitter
2
4
3
DESCRIPTION
−65
−65
MIN.
MAM288
Product specification
1
−300
−300
−5
−100
−200
−100
1.2
+150
150
+150
MAX.
PZTA92
2, 4
3
2
V
V
V
mA
mA
mA
W
°C
°C
°C
.
UNIT

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