PBSS9110Z,135 NXP Semiconductors, PBSS9110Z,135 Datasheet - Page 7

• Manufacturer Part Number: PBSS9110Z,135
• Description: TRANS PNP 100V 1A SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS9110Z,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 1.4W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057978135; PBSS9110Z /T3; PBSS9110Z /T3

NXP Semiconductors
PBSS9110Z_3
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.2
BE
−0.8
−0.4
600
400
200
−10
−10
0
0
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −10 V
= −10 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
−10
−10
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
2
2
−10
−10
001aaa376
001aaa377
3
I
3
I
C
C
(mA)
(mA)
Rev. 03 — 11 December 2009
−10
−10
4
4
Fig 6.
Fig 8.
V
−10
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
−1.6
−1.2
−0.8
−0.4
C
−10
−2
−1
−1
−10
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
100 V, 1 A PNP low V
I
−1
amb
amb
amb
amb
B
/I
B
(mA) = −45
= 10
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
−40.5
−31.5
−36
−27
(1)
(2)
(3)
−10
−2
−10
−3
PBSS9110Z
2
CEsat
−10
© NXP B.V. 2009. All rights reserved.
−4
(BISS) transistor
001aaa381
001aaa384
V
3
I
C
CE
−22.5
−18
−13.5
−9
−4.5
(mA)
(V)
−10
−5
4
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