PBSS9110Z,135 NXP Semiconductors, PBSS9110Z,135 Datasheet - Page 6

• Manufacturer Part Number: PBSS9110Z,135
• Description: TRANS PNP 100V 1A SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS9110Z,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 1.4W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057978135; PBSS9110Z /T3; PBSS9110Z /T3

NXP Semiconductors
7. Characteristics
PBSS9110Z_3
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 03 — 11 December 2009
Conditions
V
V
T
V
V
V
V
I
V
I
V
I
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
I
V
I
f = 100 MHz
V
I
f = 1 MHz
C
C
C
C
B
C
B
C
B
C
B
C
B
C
Bon
Boff
C
E
j
CB
CB
CE
BE
EB
CE
CE
CE
CE
CE
CC
CE
CB
= 150 °C
= −25 mA
= −50 mA
= −100 mA
= −100 mA
= −100 mA
= i
= −1 mA
= −250 mA
= −0.5 A
= −250 mA;
= −500 mA;
= −1 A;
= −1 A;
= −1 A;
= −0.5 A;
= −50 mA;
= −0.025 A;
= 0.025 A
= 0 V
= −4 V; I
= −80 V; I
= −80 V; I
= −80 V;
= −5 V;
= −5 V;
= −5 V;
= −5 V; I
= −5 V; I
= −10 V;
= −10 V;
= −10 V;
e
= 0 A;
100 V, 1 A PNP low V
C
C
C
E
E
= 0 A
= −1 A
= −1 A
= 0 A;
= 0 A
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
150
150
150
125
-
-
-
-
-
-
-
-
-
100
-
-
-
-
PBSS9110Z
CEsat
Typ
-
-
-
-
-
-
-
-
-
-
-
170
-
-
20
60
80
290
120
410
-
-
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
−100
−50
−100
−100
-
-
450
-
−120
−180
−320
320
−1.1
−1.0
-
-
-
-
-
-
-
17
Unit
nA
μA
nA
nA
mV
mV
mV
mΩ
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
6 of 14