BF199,112 NXP Semiconductors, BF199,112 Datasheet - Page 3

• Manufacturer Part Number: BF199,112
• Description: TRANS NPN 25V 25MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BF199,112

• Transistor Type: NPN
• Current - Collector (ic) (max): 25mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 38 @ 7mA, 10V
• Power - Max: 500mW
• Frequency - Transition: 550MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Vce Saturation (max) @ Ib, Ic: -
• Other names: 933063420112; BF199P; BF199P

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Nov 08
V
V
V
I
I
P
T
T
T
R
I
I
h
V
C
f
SYMBOL
SYMBOL
SYMBOL
amb
C
CM
CBO
EBO
T
FE
stg
j
amb
CBO
CEO
EBO
tot
BE
NPN medium frequency transistor
th(j-a)
re
= 25 °C unless otherwise specified.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
V
CB
EB
CE
CE
CB
CE
= 4 V; I
= 40 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
open emitter
open base
open collector
T
amb
C
≤ 25 °C; note 1
CONDITIONS
E
C
C
C
C
= 0 A
3
= 0 A
= 7 mA
= 7 mA
= 0 A; f = 1 MHz
= 5 mA; f = 100 MHz
note 1
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−65
−
−65
−
−
38
−
−
−
MIN.
MIN.
VALUE
250
−
−
−
775
−
550
TYP.
40
25
4
25
25
500
+150
150
+150
MAX.
Product data sheet
100
100
−
925
0.5
−
MAX.
BF199
UNIT
K/W
V
V
V
mA
mA
mW
°C
°C
°C
UNIT
nA
nA
mV
pF
MHz
UNIT