BF199,112 NXP Semiconductors, BF199,112 Datasheet - Page 2

• Manufacturer Part Number: BF199,112
• Description: TRANS NPN 25V 25MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BF199,112

• Transistor Type: NPN
• Current - Collector (ic) (max): 25mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 38 @ 7mA, 10V
• Power - Max: 500mW
• Frequency - Transition: 550MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Vce Saturation (max) @ Ib, Ic: -
• Other names: 933063420112; BF199P; BF199P

NXP Semiconductors
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 25 V).
APPLICATIONS
• Output stage of a vision IF amplifier.
DESCRIPTION
NPN medium frequency transistor in a TO-92; SOT54
plastic package.
QUICK REFERENCE DATA
ORDERING INFORMATION
2004 Nov 08
V
V
I
P
h
f
BF199
SYMBOL
CM
T
FE
CBO
CEO
tot
NPN medium frequency transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
PARAMETER
SC-43A
NAME
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
T
V
V
amb
CE
CE
= 10 V; I
= 10 V; I
≤ 25 °C
CONDITIONS
C
C
= 7 mA
= 5 mA; f = 100 MHz
2
PINNING
handbook, halfpage
DESCRIPTION
Fig.1
PACKAGE
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
3
base
emitter
collector
−
−
−
−
38
−
MIN.
DESCRIPTION
−
−
−
−
−
550
TYP.
MAM258
Product data sheet
40
25
25
500
−
−
MAX.
1
VERSION
BF199
SOT54
V
V
mA
mW
MHz
3
2
UNIT