BCP51,115 NXP Semiconductors, BCP51,115 Datasheet - Page 9
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BCP51,115
Manufacturer Part Number
BCP51,115
Description
TRANSISTOR PNP 45V 1A SOT-223
Manufacturer
NXP Semiconductors
Datasheet
1.BCX51-16115.pdf
(15 pages)
Specifications of BCP51,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1W
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
PNP
Frequency - Transition
145MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1000 mW
Maximum Operating Frequency
145 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933917270115::BCP51 T/R::BCP51 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP51,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
7. Characteristics
BC636_BCP51_BCX51_8
Product data sheet
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, mounting pad for collector 6 cm
typical values
5
duty cycle =
0.75
0.33
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0
10
4
Table 8.
T
[1]
Symbol
I
I
h
V
V
C
f
CBO
EBO
T
amb
FE
CEsat
BE
c
Pulse test: t
= 25 C unless otherwise specified.
10
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
Characteristics
3
h
h
p
FE
FE
selection -10
selection -16
300 s; = 0.02.
2
10
Rev. 08 — 22 February 2008
2
10
Conditions
V
V
T
V
V
V
I
I
V
V
f = 1 MHz
V
f = 100 MHz
C
B
j
CB
CB
EB
CE
CE
CE
CB
CE
1
I
I
I
I
I
= 150 C
= 500 mA;
= 50 mA
C
C
C
C
C
= 5 V; I
= 30 V; I
= 30 V; I
= 2 V
= 2 V
= 2 V; I
= 10 V; I
= 5 V; I
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
BC636; BCP51; BCX51
C
C
C
1
E
E
E
= 0 A
= 500 mA
= 50 mA;
45 V, 1 A PNP medium power transistors
= i
= 0 A
= 0 A;
e
= 0 A;
10
[1]
[1]
[1]
Min
-
-
-
63
63
40
63
100
-
-
-
-
10
Typ
-
-
-
-
-
-
-
-
-
-
15
145
2
© NXP B.V. 2008. All rights reserved.
t
p
006aaa818
(s)
Max
-
250
-
160
250
-
-
100
10
100
0.5
1
10
3
Unit
nA
nA
V
V
pF
MHz
A
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