BCP51,115 NXP Semiconductors, BCP51,115 Datasheet - Page 4
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BCP51,115
Manufacturer Part Number
BCP51,115
Description
TRANSISTOR PNP 45V 1A SOT-223
Manufacturer
NXP Semiconductors
Datasheet
1.BCX51-16115.pdf
(15 pages)
Specifications of BCP51,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1W
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
PNP
Frequency - Transition
145MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1000 mW
Maximum Operating Frequency
145 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933917270115::BCP51 T/R::BCP51 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP51,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
5. Limiting values
BC636_BCP51_BCX51_8
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
BC636
BCP51
BCX51
Rev. 08 — 22 February 2008
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
BC636; BCP51; BCX51
p
p
amb
1 ms
1 ms
45 V, 1 A PNP medium power transistors
25 C
[1]
[1]
[2]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2008. All rights reserved.
Max
0.83
0.65
1
0.5
0.9
1.3
150
+150
+150
45
45
5
1
1.5
0.2
Unit
V
V
V
A
A
A
W
W
W
W
W
W
C
C
C
2
2
.
.
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