BCP51,115 NXP Semiconductors, BCP51,115 Datasheet - Page 5
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BCP51,115
Manufacturer Part Number
BCP51,115
Description
TRANSISTOR PNP 45V 1A SOT-223
Manufacturer
NXP Semiconductors
Datasheet
1.BCX51-16115.pdf
(15 pages)
Specifications of BCP51,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1W
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
PNP
Frequency - Transition
145MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1000 mW
Maximum Operating Frequency
145 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933917270115::BCP51 T/R::BCP51 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP51,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BC636_BCP51_BCX51_8
Product data sheet
Fig 1. Power derating curve SOT54
Fig 3. Power derating curves SOT89
P
(W)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
tot
1.6
1.2
0.8
0.4
0
FR4 PCB, standard footprint
75
25
0
25
75
P
(W)
tot
1.6
1.2
0.8
0.4
0
75
125
T
006aaa219
amb
2
2
( C)
Rev. 08 — 22 February 2008
25
175
(1)
(2)
(3)
0
25
Fig 2. Power derating curves SOT223
75
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
P
(W)
tot
1.6
1.2
0.8
0.4
BC636; BCP51; BCX51
0
75
125
T
006aaa221
amb
45 V, 1 A PNP medium power transistors
( C)
25
175
(1)
(2)
0
25
75
© NXP B.V. 2008. All rights reserved.
125
T
006aaa220
amb
2
( C)
175
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