PBSS4160V,115 NXP Semiconductors, PBSS4160V,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS4160V,115
• Description: TRANS NPN 60V 1A LOW SAT SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4160V,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: NPN
• Current - Collector (ic) (max): 900mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058118115; PBSS4160V T/R; PBSS4160V T/R

NXP Semiconductors
PBSS4160V_3
Product data sheet
Fig 9.
(10) I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
(A)
1.6
1.2
0.8
0.4
I
C
2
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= 60 mA
= 54 mA
= 48 mA
= 42 mA
= 36 mA
= 30 mA
= 24 mA
= 18 mA
= 12 mA
= 6 mA
= 25 °C
1
(6)
(5)
2
(4)
(3)
3
(2)
(10)
(8)
(1)
(7)
(9)
4
V
CE
mle131
(V)
Rev. 03 — 11 December 2009
5
Fig 10. Equivalent on-resistance as a function of
R
CEsat
(Ω)
(1) T
(2) T
(3) T
10
10
10
10
−1
10
1
3
2
I
collector current; typical values
−1
C
amb
amb
amb
/I
60 V, 1 A NPN low V
B
= 20
= 100 °C
= 25 °C
= −55 °C
1
10
(2)
10
PBSS4160V
(1)
(3)
2
CEsat
10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
3
I
C
mle132
(mA)
10
4
8 of 14