PBSS4160V,115 NXP Semiconductors, PBSS4160V,115 Datasheet - Page 2

• Manufacturer Part Number: PBSS4160V,115
• Description: TRANS NPN 60V 1A LOW SAT SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4160V,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: NPN
• Current - Collector (ic) (max): 900mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058118115; PBSS4160V T/R; PBSS4160V T/R

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PBSS4160V_3
Product data sheet
Table 2.
Table 3.
Table 4.
Pin
1, 2, 5, 6
3
4
Type number Package
PBSS4160V
Type number
PBSS4160V
Discrete pinning
Ordering information
Marking codes
Description
collector
base
emitter
Name
-
Rev. 03 — 11 December 2009
Description
plastic surface mounted package; 6 leads
60 V, 1 A NPN low V
Marking code
41
Simplified outline
1
6
2
5
3
4
PBSS4160V
CEsat
Symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
3
1, 2, 5, 6
sym014
Version
SOT666
4
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