BSS63,215 NXP Semiconductors, BSS63,215 Datasheet - Page 6

• Manufacturer Part Number: BSS63,215
• Description: TRANS PNP 100V 100MA SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSS63,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 25mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 85MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 100 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 100 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 85 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933330390215; BSS63 T/R; BSS63 T/R

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R75/04/pp6
Date of release: 2004 Jan 16
Document order number: 9397 750 12424