BSS63,215 NXP Semiconductors, BSS63,215 Datasheet
BSS63,215
Specifications of BSS63,215
BSS63 T/R
BSS63 T/R
Related parts for BSS63,215
BSS63,215 Summary of contents
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DATA SHEET BSS63 PNP high-voltage transistor Product data sheet Supersedes data of 1999 Apr 15 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...
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... NXP Semiconductors PNP high-voltage transistor FEATURES • Low current (max. 100 mA) • High voltage (max. 100 V). APPLICATIONS • High-voltage general purpose • Switching applications. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: BSS64. MARKING TYPE NUMBER BSS63 Note 1. ∗ Made in Hong Kong. ...
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... NXP Semiconductors PNP high-voltage transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation tot ...
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... NXP Semiconductors PNP high-voltage transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...