2PD601ARW,115 NXP Semiconductors, 2PD601ARW,115 Datasheet - Page 4

• Manufacturer Part Number: 2PD601ARW,115
• Description: TRANSISTOR NPN 50V 100MA SC-70
• Manufacturer: NXP Semiconductors

Specifications of 2PD601ARW,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 210 @ 2mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2PD601ARW T/R; 2PD601ARW T/R; 934057048115

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Feb 12
I
I
h
h
V
C
f
amb
CBO
EBO
T
SYMBOL
FE
FE
CEsat
NPN general purpose transistors; 50 V,
100 mA
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
p
group Q
group R
group S
≤ 300 μs; δ ≤ 0.02.
PARAMETER
I
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= 100 mA; V
= 2 mA; V
= 100 mA; I
= 2 mA; V
e
= 0; V
4
CB
CB
EB
CONDITIONS
= 60 V
= 60 V; T
= 5 V
CE
CB
CE
B
CE
= 10 V; f = 1 MHz
= 10 V
= 10 V;
= 10 mA; note 1
= 2 V; note 1
j
= 150 °C
−
−
−
90
160
210
290
−
−
100
MIN.
2PD601A series
10
5
10
−
260
340
460
250
3
−
Product data sheet
MAX.
nA
μA
nA
mV
pF
MHz
UNIT