2PD601ARW,115 NXP Semiconductors, 2PD601ARW,115 Datasheet

TRANSISTOR NPN 50V 100MA SC-70

2PD601ARW,115

Manufacturer Part Number
2PD601ARW,115
Description
TRANSISTOR NPN 50V 100MA SC-70
Manufacturer
NXP Semiconductors
Datasheets

Specifications of 2PD601ARW,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 2mA, 10V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2PD601ARW T/R
2PD601ARW T/R
934057048115
Product data sheet
Supersedes data of 2002 Jun 26
DATA SHEET
2PD601A series
NPN general purpose transistors;
50 V, 100 mA
DISCRETE SEMICONDUCTORS
2004 Feb 12

Related parts for 2PD601ARW,115

2PD601ARW,115 Summary of contents

Page 1

DATA SHEET 2PD601A series NPN general purpose transistors 100 mA Product data sheet Supersedes data of 2002 Jun 26 DISCRETE SEMICONDUCTORS 2004 Feb 12 ...

Page 2

... NXP Semiconductors NPN general purpose transistors 100 mA FEATURES • Available in SOT323 (SC-70) and SOT346 (SC-59) packages • Available in three different DC current gain versions (Q, R, S). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN general purpose transistors (see “Simplified outline, symbol and pinning” for package details). ...

Page 3

... NXP Semiconductors NPN general purpose transistors 100 mA ORDERING INFORMATION TYPE NUMBER NAME 2PD601AQ 2PD601AR 2PD601AS 2PD601AQW 2PD601ARW 2PD601ASW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC) ...

Page 4

... NXP Semiconductors NPN general purpose transistors 100 mA CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain current gain FE group Q group R group S V collector-emitter saturation voltage CEsat C collector capacitance c f transition frequency ...

Page 5

... NXP Semiconductors NPN general purpose transistors 100 mA PACKAGE OUTLINES Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 1.3 0.1 0.50 0.26 mm 1.0 0.013 0.35 0.10 OUTLINE VERSION IEC SOT346 2004 Feb scale 3.1 1.7 3.0 1.9 0.95 2.7 1.3 2 ...

Page 6

... NXP Semiconductors NPN general purpose transistors 100 mA Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2004 Feb scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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