BCW60C,215 NXP Semiconductors, BCW60C,215 Datasheet - Page 4
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BCW60C,215
Manufacturer Part Number
BCW60C,215
Description
TRANSISTOR NPN 32V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BCW60B235.pdf
(6 pages)
Specifications of BCW60C,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933324100215
BCW60C T/R
BCW60C T/R
BCW60C T/R
BCW60C T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCW60C,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 22
Plastic surface mounted package; 3 leads
NPN general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
4
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
BCW60 series
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23