BCW60C,215 NXP Semiconductors, BCW60C,215 Datasheet - Page 3
![TRANSISTOR NPN 32V 100MA SOT23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BCW60C,215
Manufacturer Part Number
BCW60C,215
Description
TRANSISTOR NPN 32V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BCW60B235.pdf
(6 pages)
Specifications of BCW60C,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933324100215
BCW60C T/R
BCW60C T/R
BCW60C T/R
BCW60C T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCW60C,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 22
R
I
I
h
V
V
V
C
C
f
F
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
NPN general purpose transistors
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
p
BCW60B
BCW60C
BCW60D
BCW60B
BCW60C
BCW60D
BCW60B
BCW60C
BCW60D
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz; note 1
I
R
E
E
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
S
= 0; V
= 0; V
= i
= 0; V
= 10 μA; V
= 2 mA; V
= 50 mA; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 10 μA; V
= 2 mA; V
= 50 mA; V
= i
= 10 mA; V
= 200 μA; V
= 2 kΩ; f = 1 kHz; B = 200 Hz
e
c
= 0; V
= 0; V
CB
CB
EB
CONDITIONS
3
= 32 V
= 32 V; T
= 4 V
CB
EB
CE
CE
B
B
B
B
CE
CE
CE
CE
CE
CE
= 0.25 mA
= 1.25 mA
= 0.25 mA
= 1.25 mA
= 0.5 V; f = 1 MHz −
= 10 V; f = 1 MHz
= 5 V
= 5 V
= 5 V
= 5 V
note 1
= 1 V
= 1 V
= 5 V;
= 5 V;
CONDITIONS
amb
= 150 °C −
−
−
20
40
100
180
250
380
70
90
100
50
100
600
0.7
−
550
−
−
100
−
MIN.
VALUE
500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
520
650
780
1.7
11
250
2
TYP.
BCW60 series
Product data sheet
20
20
20
−
−
−
310
460
630
−
−
−
350
550
850
1.05
−
750
−
−
−
−
6
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
V
mV
mV
mV
pF
pF
MHz
dB
UNIT