BCV27,215 NXP Semiconductors, BCV27,215 Datasheet - Page 4

• Manufacturer Part Number: BCV27,215
• Description: TRANS DARL NPN 30V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCV27,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Transistor Type: NPN - Darlington
• Frequency - Transition: 220MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 1.5@0.1mA@100mAV
• Collector-emitter Saturation Voltage: 1@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SST
• Dc: 1117
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 933806220215::BCV27 T/R::BCV27 T/R

NXP Semiconductors
CHARACTERISTICS
T
2004 Jan 13
handbook, full pagewidth
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
NPN Darlington transistors
V
80000
60000
40000
20000
CE
h FE
= 25 °C unless otherwise specified.
= 2 V.
10
0
−1
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
BCV27
BCV47
BCV27
BCV47
PARAMETER
1
Fig.2 DC current gain; typical values.
I
I
I
V
V
I
I
I
I
E
E
E
C
C
C
C
CE
CE
I
I
I
I
I
I
= 0; V
= 0; V
= 0; V
= 100 mA; I
= 100 mA; I
= 10 mA; V
= 30 mA; V
C
C
C
C
C
C
= 5 V; (see Fig.2)
= 5 V; (see Fig.2)
= 1 mA
= 10 mA
= 100 mA
= 1 mA
= 10 mA
= 100 mA
CBO
CBO
EB
4
10
CONDITIONS
= 10 V
= 30 V
= 60 V
CE
CE
B
B
= 0.1 mA
= 0.1 mA
= 5 V
= 5 V; f = 100 MHz −
10
2
−
−
−
4 000
1 0 000 −
2 0 000 −
2 000
4 000
10 000 −
−
−
−
MIN.
BCV27; BCV47
I C (mA)
−
−
−
−
−
−
−
−
−
220
TYP.
Product data sheet
100
100
100
−
−
−
−
−
−
1
1.5
1.4
−
MAX.
MGD837
10
3
nA
nA
nA
V
V
V
MHz
UNIT