BCV27,215 NXP Semiconductors, BCV27,215 Datasheet - Page 3

TRANS DARL NPN 30V 500MA SOT23

BCV27,215

Manufacturer Part Number
BCV27,215
Description
TRANS DARL NPN 30V 500MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV27,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Transistor Type
NPN - Darlington
Frequency - Transition
220MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
10V
Base-emitter Saturation Voltage (max)
1.5@0.1mA@100mAV
Collector-emitter Saturation Voltage
1@0.1mA@100mAV
Collector Current (dc) (max)
500mA
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SST
Dc
1117
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
933806220215::BCV27 T/R::BCV27 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCV27,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 13
V
V
V
I
I
I
P
T
T
T
R
C
CM
B
SYMBOL
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
BCV27
BCV47
BCV27
BCV47
PARAMETER
PARAMETER
open emitter
open base
open collector
T
3
amb
≤ 25 °C; note 1
CONDITIONS
note 1
CONDITIONS
−65
−65
MIN.
BCV27; BCV47
VALUE
500
Product data sheet
40
80
30
60
10
500
800
100
250
+150
150
+150
MAX.
UNIT
K/W
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT

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