BC857CW,115 NXP Semiconductors, BC857CW,115 Datasheet - Page 3

TRANSISTOR PNP 45V 100MA SOT323

BC857CW,115

Manufacturer Part Number
BC857CW,115
Description
TRANSISTOR PNP 45V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC857CW,115

Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
200mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
PNP
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Collector/base Gain Hfe Min
420
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 45 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
420
Frequency (max)
100MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934021860115::BC857CW T/R::BC857CW T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
2002 Feb 04
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
th j-a
SYMBOL
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
PARAMETER
PARAMETER
open emitter
open base
open collector
T
in free air; note 1
amb
3
≤ 25 °C; note 1
CONDITIONS
CONDITIONS
BC856W; BC857W; BC858W
−65
−65
MIN.
VALUE
625
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
200
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT

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