BC857CW T/R NXP Semiconductors, BC857CW T/R Datasheet

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BC857CW T/R

Manufacturer Part Number
BC857CW T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC857CW T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.1 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC857CW,115
Product data sheet
Supersedes data of 1999 Apr 12
dbook, halfpage
DATA SHEET
BC856W; BC857W; BC858W
PNP general purpose transistors
DISCRETE SEMICONDUCTORS
M3D102
2002 Feb 04

Related parts for BC857CW T/R

BC857CW T/R Summary of contents

Page 1

... DATA SHEET dbook, halfpage BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 12 DISCRETE SEMICONDUCTORS M3D102 2002 Feb 04 ...

Page 2

... NXP Semiconductors PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. MARKING TYPE NUMBER BC856W ...

Page 3

... NXP Semiconductors PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BC856W BC857W BC858W V collector-emitter voltage CEO BC856W BC857W BC858W V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP general purpose transistors CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE BC856W BC857W; BC858W BC856AW; BC857AW BC856BW; BC857BW BC857CW V collector-emitter saturation voltage CEsat V base-emitter saturation voltage BEsat ...

Page 5

... NXP Semiconductors PNP general purpose transistors 500 handbook, halfpage h FE 400 (1) 300 (2) 200 (3) 100 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857AW 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...

Page 6

... NXP Semiconductors PNP general purpose transistors 1000 handbook, halfpage h FE 800 600 (1) 400 (2) 200 (3) 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857BW 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current ...

Page 7

... NXP Semiconductors PNP general purpose transistors 1000 handbook, halfpage h FE (1) 800 600 (2) 400 (3) 200 0 −2 −1 −10 −10 −1 −10 = −5 V. BC857CW 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.10 DC current gain as a function of collector current; typical values. ...

Page 8

... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2002 Feb scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES ...

Page 9

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 10

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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