BGD906 NXP Semiconductors, BGD906 Datasheet - Page 7

• Manufacturer Part Number: BGD906
• Description: RF Amplifier CATV MODULES
• Manufacturer: NXP Semiconductors
• Type: Power Amplifierr

Specifications of BGD906

• Operating Frequency: 860 MHz
• Noise Figure: 6 dB at 900 MHz
• Supply Current: 435 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Frequency (max): 860MHz
• Power Supply Requirement: Single
• Single Supply Voltage (max): 30V
• Package Type: SOT-115J
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Operating Temperature Classification: Commercial
• Operating Temp Range: -20C to 100C
• Pin Count: 7
• Mounting: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGD906,112

NXP Semiconductors
2001 Nov 01
handbook, halfpage
860 MHz, 21.5 dB gain power doubler
amplifier
Z
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
Fig.8
S
CTB
(dB)
= Z
−20
−30
−40
−50
−60
−70
L
40
= 75 Ω; V
Composite triple beat as a function of output
voltage.
(1)
(2)
(3)
B
= 24 V; 129 chs; f
45
m
= 859.25 MHz.
50
V o (dBmV)
MGS667
55
7
handbook, halfpage
Z
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
Fig.9
S
CSO
(dB)
= Z
−20
−30
−40
−50
−60
−70
L
40
= 75 Ω; V
Composite second order distortion as a
function of output voltage.
(1)
(2)
(3)
B
= 24 V; 129 chs; f
45
BGD906; BGD906MI
m
= 860.5 MHz.
50
Product specification
V o (dBmV)
MGS668
55