BGD906 NXP Semiconductors, BGD906 Datasheet - Page 5

• Manufacturer Part Number: BGD906
• Description: RF Amplifier CATV MODULES
• Manufacturer: NXP Semiconductors
• Type: Power Amplifierr

Specifications of BGD906

• Operating Frequency: 860 MHz
• Noise Figure: 6 dB at 900 MHz
• Supply Current: 435 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Frequency (max): 860MHz
• Power Supply Requirement: Single
• Single Supply Voltage (max): 30V
• Package Type: SOT-115J
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Operating Temperature Classification: Commercial
• Operating Temp Range: -20C to 100C
• Pin Count: 7
• Mounting: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGD906,112

NXP Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 21.5 dB gain power doubler
amplifier
Z
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) V
(2) Typ. +3 σ.
Fig.2
Z
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) V
(2) Typ. +3 σ.
Fig.4
S
S
CTB
CSO
(dB)
(dB)
= Z
= Z
−50
−60
−70
−80
−90
−50
−60
−70
−80
−90
o
o
L
L
.
.
0
= 75 Ω; V
= 75 Ω; V
0
(2)
(3)
(4)
Composite second order distortion as a
Composite triple beat as a function of
frequency under tilted conditions.
function of frequency under tilted
conditions.
B
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
200
200
(3) Typ.
(4) Typ. −3 σ.
(3) Typ.
(4) Typ. −3 σ.
400
400
(1)
(1)
(1)
(2)
(3)
(4)
600
600
f (MHz)
f (MHz)
MGS661
MGS663
(2)
(3)
(4)
(2)
(1)
(3)
(4)
800
800
52
(dBmV)
48
44
40
36
52
(dBmV)
48
44
40
36
V o
V o
5
handbook, halfpage
Z
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) V
(2) Typ. +3 σ.
Fig.3
X mod
S
(dB)
= Z
−50
−60
−70
−80
−90
o
L
.
0
= 75 Ω; V
(2)
(3)
(4)
Cross modulation as a function of frequency
under tilted conditions.
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
200
(3) Typ.
(4) Typ. −3 σ.
BGD906; BGD906MI
400
(1)
(1)
Product specification
600
f (MHz)
MGS662
(2)
(3)
(4)
800
52
(dBmV)
48
44
40
36
V o