BGA 622 H6820 Infineon Technologies, BGA 622 H6820 Datasheet

RF Amplifier RF SILICON MMIC

BGA 622 H6820

Manufacturer Part Number
BGA 622 H6820
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet

Specifications of BGA 622 H6820

Operating Frequency
1.575 GHz
P1db
- 16.5 dBm
Noise Figure
1 dB
Operating Supply Voltage
2.75 V
Supply Current
10 mA
Maximum Power Dissipation
35 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-343
Minimum Operating Temperature
- 65 C
Other names
BGA622H6820XT
D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8
B G A 6 22
S i l i c o n G e r m a n i u m W i d e B a n d L o w N o i s e
A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n
S m a l l S i g n a l D i s c r et e s

Related parts for BGA 622 H6820

BGA 622 H6820 Summary of contents

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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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... BGA622, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2005-11-16 Page Subjects (major changes since last revision) All Document layout change Trademarks ® SIEGET is a registered trademark of Infineon Technologies AG. Data Sheet 3 BGA622 Rev. 2.2, 2008-04-14 ...

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... Pin connection Description The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level open ...

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Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Maximum Ratings Table 1 Maximum ratings Parameter V Voltage at pin CC Voltage at pin Out Current into pin In Current into pin Out V Current into pin ...

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Electrical Characteristics 2.1 Electrical characteristics 2.75 V, Frequency = 1.575 GHz, unless otherwise specified CC Table 3 Electrical Characteristics Parameter Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Z ...

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Electrical characteristics 2.75 V, Frequency = 2.14 GHz, unless otherwise specified CC Table 4 Electrical Characteristics Parameter Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Z Noise figure ( ...

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Figure 3 Application Circuit for 1800 - 2500 MHz Data Sheet DC, Out 2.75V 47pF (DC-Block) RFC 150pF On/Off Switch DC, 2.75V 2.2nH (for improved input match) 47pF (DC-Block) In BGA622_Application_Circuit.vsd 8 BGA622 Electrical Characteristics Rev. 2.2, 2008-04-14 ...

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Measured Parameters 2 Power Gain | f( 2.75V 5.8mA CC tot− Frequency [GHz] ...

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Stability f( 2.75V 5.8mA CC tot− 3.5 3 2 Frequency [GHz] Input Compression Point 2.14GHz, ...

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Device Current I = f(V tot− parameter in °C A 8.5 8 7.5 7 6.5 6 5.5 5 2 Power Gain | f 2.14GHz ...

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Package Information 4 1 +0.1 0.3 Figure 4 Package Outline SOT343 Figure 5 Tape for SOT343 Data Sheet 2 ±0.2 B 1.3 ±0.1 0. +0.2 acc. to DIN 6784 2 +0.1 0.6 4 Pin 1 2.15 ...

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