MJE18004G ON Semiconductor, MJE18004G Datasheet - Page 7

• Manufacturer Part Number: MJE18004G
• Description: TRANS POWER NPN 5A 450V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18004G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 500mA, 2.5A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 300mA, 5V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 14
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE18004GOS

COMMON
+15 V
+10 V
-V
-1
-2
-3
-4
-5
Figure 18. Dynamic Saturation Voltage Measurements
5
4
3
2
1
0
off
0
1 mF
V
I
CE
B
MPF930
50 W
1
1 ms
90% I
dyn 1 ms
2
150 W
500 mF
3 W
B
3 ms
MPF930
3
100 W
3 W
dyn 3 ms
TIME
4
150 W
3 W
Table 1. Inductive Load Switching Drive Circuit
5
MTP8P10
MJE210
MUR105
6
MTP12N10
MTP8P10
http://onsemi.com
7
8
R
R
B1
B2
7
A
1 mF
I
out
10
9
8
7
6
5
4
3
2
1
0
100 mF
0
V
Figure 19. Inductive Switching Measurements
I
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
V
I
B
C
I
CLAMP
C
CC
(pk) = 100 mA
= 20 VOLTS
1
V
CE
I
B
90% I
I
2
B
10% V
1
B
1
CLAMP
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
V
RB1 SELECTED FOR
DESIRED I
3
CC
V
CE
I
= 15 VOLTS
B
t
si
PEAK
2
TIME
4
B
1
5
t
c
I
C
90% I
PEAK
t
fi
6
RBSOA
L = 500 mH
RB2 = 0
V
RB1 SELECTED
FOR DESIRED I
CC
C
= 15 VOLTS
10% I
7
C
B
8
1