MJE18004G ON Semiconductor, MJE18004G Datasheet - Page 10

• Manufacturer Part Number: MJE18004G
• Description: TRANS POWER NPN 5A 450V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18004G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 500mA, 2.5A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 300mA, 5V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 14
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE18004GOS

H
Q
Z
L
V
G
1 2 3
4
B
N
D
A
K
F
T
U
PACKAGE DIMENSIONS
R
J
S
http://onsemi.com
CASE 221A−09
C
TO−220AB
ISSUE AF
−T−
10
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
Y14.5M, 1982.
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
DIM
A
B
C
D
F
G
H
K
L
N
Q
R
S
T
U
V
Z
J
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
MIN
---
INCHES
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.055
0.255
0.050
0.080
0.110
MAX
---
14.48
12.70
MILLIMETERS
MIN
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
15.75
10.28
14.27
MAX
4.82
0.88
4.09
2.66
3.93
0.64
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
---