2N4918G ON Semiconductor, 2N4918G Datasheet - Page 5

TRANS PNP GP 1A 40V TO225AA

2N4918G

Manufacturer Part Number
2N4918G
Description
TRANS PNP GP 1A 40V TO225AA
Manufacturer
ON Semiconductor
Type
Medium Powerr
Datasheets

Specifications of 2N4918G

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (max)
500µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 500mA, 1V
Power - Max
30W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-225-3
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
40
Maximum Operating Frequency
3 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
1 A
Current, Gain
10
Frequency
3 MHz
Package Type
TO-225
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
4.16 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
40 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.6 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
3A
Dc Current Gain (min)
40
Frequency (max)
3MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N4918GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4918G
Manufacturer:
ON
Quantity:
2 395
Part Number:
2N4918G
Manufacturer:
ON Semiconductor
Quantity:
2
1000
10
10
700
500
300
200
100
10
10
10
10
10
10
10
10
10
10
10
70
50
30
20
10
−1
− 2
8
7
6
5
4
3
2
1
0
4
3
2.0
−0.2
0
Figure 10. Effects of Base−Emitter Resistance
3.0 5.0
REVERSE
−0.1
Figure 12. Collector Cut−Off Region
30
V
10
BE
I
I
OBTAINED FROM
FIGURE 13
T
C
CES
J
, BASE−EMITTER VOLTAGE (VOLTS)
I
T
C
Figure 8. Current Gain
, JUNCTION TEMPERATURE ( C)
0
−55 C
25 C
, COLLECTOR CURRENT (mA)
J
T
I
CES
J
= 150 C
VALUES
100 C
20 30
25 C
= 150 C
FORWARD
60
+0.1
I
C
50
I
= I
C
= 10 I
CES
+0.2
100
CES
90
200 300 500
I
TYPICAL DC CHARACTERISTICS
C
+0.3
= 2x I
2N4918 − 2N4920* Series
V
120
CE
CES
V
V
CE
CE
+0.4
= 1.0 V
= 30 V
= 30 V
http://onsemi.com
1000
+0.5
2000
150
5
+2.5
+2.0
+1.5
+1.0
+0.5
−0.5
−1.0
−1.5
−2.0
−2.5
1.0
0.8
0.6
0.4
0.2
1.5
1.2
0.9
0.6
0.3
0
0
0
0.2
2.0
2.0
T
0.3 0.5
3.0 5.0
3.0
J
I
C
= 25 C
= 0.1 A
T
V
Figure 9. Collector Saturation Region
5.0
J
BE(sat)
Figure 13. Temperature Coefficients
V
= 25 C
BE
V
*APPLIES FOR I
*q
@ V
CE(sat)
q
10
1.0
@ I
10
VB
VC
Figure 11. “On” Voltage
CE
I
I
FOR V
C
C
FOR V
C
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.25 A
@ I
B
= 2.0 V
2.0
I
20 30 50
20 30
B
= 10
, BASE CURRENT (mA)
C
/I
BE
CE(sat)
3.0
B
= 10
C
/I
5.0
B
50
0.5 A
<
h FE @ V CE + 1.0 V
100 200 300
100 200
T
10
J
= 100 C to 150 C
T
J
20
= −55 C to +100 C
1.0 A
2
300 500 1000
30
500 1000
50
100
2000
2000
200

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