2N4918G ON Semiconductor, 2N4918G Datasheet

2N4918G

Manufacturer Part Number

2N4918G

Description

TRANS PNP GP 1A 40V TO225AA

Manufacturer

ON Semiconductor

Type

Medium Powerr

Datasheets

1.2N4920G.pdf (6 pages)

2.2N4918G.pdf (8 pages)

3.2N4918G.pdf (3 pages)

Specifications of 2N4918G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (max)

500µA

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 500mA, 1V

Power - Max

30W

Frequency - Transition

3MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

3 A

Power Dissipation

30 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

3 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

3 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

1 A

Current, Gain

Frequency

3 MHz

Package Type

TO-225

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

4.16 °C/W

Voltage, Breakdown, Collector To Emitter

40 V

Voltage, Collector To Base

40 V

Voltage, Collector To Emitter

40 V

Voltage, Collector To Emitter, Saturation

0.6 V

Voltage, Emitter To Base

5 V

Number Of Elements

Collector-emitter Voltage

40V

Collector-base Voltage

40V

Emitter-base Voltage

Collector Current (dc) (max)

Dc Current Gain (min)

Frequency (max)

3MHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N4918GOS

Available stocks

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Price

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Bonase Electronics (HK) Co., Limited

Part Number:

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applications. These high–performance plastic devices feature:

*Indicates JEDEC Registered Data for 2N4918 Series.

(1) The 1.0 Amp maximum I C value is based upon JEDEC current gain requirements.

(2) Recommend use of thermal compound for lowest thermal resistance.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

*MAXIMUM RATINGS

THERMAL CHARACTERISTICS (2)

April, 2002 – Rev. 10

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous (1)

Base Current

Total Power Dissipation @ T C = 25 C

Operating & Storage Junction

Thermal Resistance, Junction to Case

. . . designed for driver circuits, switching, and amplifier

Low Saturation Voltage —

Excellent Power Dissipation Due to Thermopad Construction —

Excellent Safe Operating Area

Gain Specified to I C = 1.0 Amp

Complement to NPN 2N4921, 2N4922, 2N4923

Semiconductor Components Industries, LLC, 2002

The 3.0 Amp maximum value is based upon actual current–handling capability of the

device (See Figure 5).

Derate above 25_C

Temperature Range

V CE(sat) = 0.6 Vdc (Max) @ I C = 1.0 Amp

P D = 30 W @ T C = 25_C

Characteristic

Ratings

)

Î Î Î

Symbol

T J , T stg

V CEO

Î Î Î Î Î

V CB

V EB

I C *

P D

I B

Î Î Î Î Î Î Î Î Î

Î Î Î Î

Î Î Î Î Î Î Î Î Î

Symbol

2N4918

Î Î Î

Î Î Î Î Î Î

–65 to +150

2N4919

0.24

5.0

1.0

3.0

1.0

Î Î Î Î

Max

4.16

2N4920

Î Î Î

_C/W

Watts

W/_C

Unit

Vdc

Adc

*ON Semiconductor Preferred Device

POWER TRANSISTORS

GENERAL–PURPOSE

3 2

Publication Order Number:

TO–225AA TYPE

40–80 VOLTS

CASE 77–09

3 AMPERE

30 WATTS

2N4918/D

Related parts for 2N4918G

2N4918G Summary of contents

Page 1

... The 3.0 Amp maximum value is based upon actual current–handling capability of the device (See Figure 5). (2) Recommend use of thermal compound for lowest thermal resistance. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 10 Î ...

Page 2

Figure 1. Power Derating http://onsemi.com 2 ...

Page 3

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 4

Figure 5. Active–Region Safe Operating Area Figure 6. Storage Time 2N4918 thru 2N4920 Figure 4. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate ...

Page 5

TYPICAL DC CHARACTERISTICS Figure 8. Current Gain Figure 10. Effects of Base–Emitter Resistance Figure 12. Collector Cut–Off Region 2N4918 thru 2N4920 Figure 9. Collector Saturation Region Figure 11. “On” Voltage Figure 13. Temperature Coefficients http://onsemi.com 5 + ...

Page 6

PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– –A– http://onsemi.com ...

Page 7

Notes 2N4918 thru 2N4920 http://onsemi.com 7 ...

Page 8

... Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800–282–9855 Toll Free USA/Canada 2N4918 thru 2N4920 JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi ...

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