2N4918G ON Semiconductor, 2N4918G Datasheet - Page 3
2N4918G
Manufacturer Part Number
2N4918G
Description
TRANS PNP GP 1A 40V TO225AA
Manufacturer
ON Semiconductor
Type
Medium Powerr
Specifications of 2N4918G
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (max)
500µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 500mA, 1V
Power - Max
30W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-225-3
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
40
Maximum Operating Frequency
3 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
1 A
Current, Gain
10
Frequency
3 MHz
Package Type
TO-225
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
4.16 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
40 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.6 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
3A
Dc Current Gain (min)
40
Frequency (max)
3MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N4918GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N4918G
Manufacturer:
ON Semiconductor
Quantity:
2
V
V
APPROX
BE(off)
in
APPROX
−11 V
Figure 2. Switching Time Equivalent Test Circuit
−11 V
V
0
in
TURN−OFF PULSE
t
1
t
2
t
3
0
APPROX 9.0 V
t
100 < t
t
DUTY CYCLE 2.0%
1
3
< 15 ns
< 15 ns
2
< 500 ms
20
40
30
10
0
V
25
CC
V
C
in
jd
<< C
eb
R
2N4918 − 2N4920* Series
R
B
+4.0 V
R
varied to
obtain desired
current levels
50
C
B
and R
Figure 1. Power Derating
T
http://onsemi.com
C
, CASE TEMPERATURE ( C)
C
SCOPE
75
3
0.07
0.05
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
100
10
V
V
V
t
CC
d
CC
BE(off)
= 30 V
= 30 V
20
= 0
125
30
Figure 3. Turn−On Time
I
V
V
I
C
C
CC
CC
, COLLECTOR CURRENT (mA)
/I
B
= 60 V
= 30 V
50
= 20
150
70 100
t
V
r
BE(off)
I
C
/I
B
= 10, UNLESS NOTED
200
= 2.0 V
300
V
T
T
CC
J
J
500
= 25 C
= 150 C
= 60 V
700 1000