PMBTA13,215 NXP Semiconductors, PMBTA13,215 Datasheet - Page 7

• Manufacturer Part Number: PMBTA13,215
• Description: TRANS NPN 30V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBTA13,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 500 mA
• Dc Collector/base Gain Hfe Min: 5000
• Maximum Operating Frequency: 125 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933816520215; PMBTA13 T/R; PMBTA13 T/R

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R75/05/pp7
Date of release: 2004 Jan 22
Document order number: 9397 750 12507