PMBTA13,215 NXP Semiconductors, PMBTA13,215 Datasheet - Page 3

• Manufacturer Part Number: PMBTA13,215
• Description: TRANS NPN 30V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBTA13,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 500 mA
• Dc Collector/base Gain Hfe Min: 5000
• Maximum Operating Frequency: 125 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933816520215; PMBTA13 T/R; PMBTA13 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 22
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
V
f
j
C
CM
B
CBO
EBO
T
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CES
EBO
tot
= 25 °C unless otherwise specified.
CEsat
BEon
NPN Darlington transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter on-state voltage
transition frequency
PMBTA13
PMBTA14
PMBTA13
PMBTA14
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
E
C
C
C
C
C
C
= 0; V
= 0; V
= 10 mA; V
= 100 mA; V
= 100 mA; I
= 100 mA; V
= 10 mA; V
3
CB
EB
open emitter
V
open collector
T
note 1
amb
BE
= 30 V
= 10 V
CONDITIONS
= 0
CE
CE
B
≤ 25 °C; note 1
CE
CE
= 0.1 mA
CONDITIONS
CONDITIONS
= 5 V; (see Fig.2)
= 5 V; f = 100 MHz
= 5 V; (see Fig.2)
= 5 V
PMBTA13; PMBTA14
−
−
−
−
−
−
−
−65
−
−65
−
−
5 000
10 000
10 000
20 000
−
−
125
MIN.
MIN.
VALUE
500
Product data sheet
30
30
10
500
800
200
250
+150
150
+150
100
100
−
−
−
−
1.5
1.4
−
MAX.
MAX.
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
nA
nA
V
V
MHz
UNIT
UNIT