2N3439 STMicroelectronics, 2N3439 Datasheet

TRANSISTOR NPN 450V 1A TO-39

2N3439

Manufacturer Part Number
2N3439
Description
TRANSISTOR NPN 450V 1A TO-39
Manufacturer
STMicroelectronics
Type
Driver, High Voltage, Switchr
Datasheets

Specifications of 2N3439

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
500mV @ 4mA, 50mA
Current - Collector Cutoff (max)
20µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 20mA, 10V
Power - Max
1W
Frequency - Transition
15MHz
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
1 A
Power Dissipation
10000 mW
Continuous Collector Current
1 A
Dc Collector/base Gain Hfe Min
30
Maximum Operating Frequency
15 MHz
Current, Base
0.5 A
Current, Collector
1 A
Current, Collector Cutoff
20 μA (Max.)
Current, Gain
160
Frequency
15 MHz
Gain, Dc Current, Maximum
160
Gain, Dc Current, Minimum
40
Package Type
TO-39
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
17.5 °C/W
Temperature, Operating, Maximum
200 °C
Thermal Resistance, Junction To Ambient
175 °C/W
Voltage, Breakdown, Collector To Emitter
350 V
Voltage, Collector To Base
450 V
Voltage, Collector To Emitter
350 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
7 V
Voltage, Saturation, Collector To Emitter
0.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2576-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
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DESCRIPTION
The 2N3439 and 2N3440 are silicon epitaxial
planar NPN transistors in jedec TO-39 metal case
designed for use in consumer and industrial
line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
ABSOLUTE MAXIMUM RATINGS
Symbol
STMicroelectronics PREFERRED
SALESTYPES
V
V
V
NPN TRANSISTOR
T
P
P
CBO
CEO
EBO
I
I
T
stg
C
B
tot
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Base Current
Total Dissipation at T
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
c
amb
C
25
E
= 0)
= 0)
50
B
o
C
= 0)
o
C
SILICON NPN TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
2N3439
450
350
-65 to 200
Value
200
0.5
10
7
1
1
TO-39
2N3440
300
250
2N3439
2N3440
Unit
o
o
W
W
V
V
V
A
A
C
C
1/4

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2N3439 Summary of contents

Page 1

... STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators ...

Page 2

... V = 300 V CE for 2N3440 V = 200 V CE for 2N3439 V = 450 V CE for 2N3440 V = 300 for 2N3439 for 2N3440 for 2N3439 1KHz 5MHz C CE Max 17.5 Max 175 Min. Typ. Max 500 500 20 350 250 0.5 1.3 40 160 C/W o C/W Unit ...

Page 3

... TO-39 MECHANICAL DATA DIM. MIN TYP. MAX. MIN. 0.500 0.49 6.6 8.5 9.4 0.200 1.2 0 (typ 2N3439 / 2N3440 inch TYP. MAX. 0.019 0.260 0.334 0.370 0.047 0.035 A P008B 3/4 ...

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